技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
• Rds On (Max) @ Id, Vgs 68mOhm @ 1.6A, 10V
• Power Dissipation (Max) 800mW (Ta)
• Supplier Device Package 3-MPAK
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) +10V, -20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant