技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
• Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V
• Power Dissipation (Max) 2W (Ta)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package Micro6™(TSOP-6)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant