- 产品型号 JAN1N5417US
- 品牌 Roving Networks (Microchip Technology)
- RoHS No
- 描述 DIODE GEN PURP 200V 3A B SQ-MELF
- 分类 单二极管
-
PDF
- 库存 1500
定价:
- 1 8.11
技术参数
- Package / Case SQ-MELF, B
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 150 ns
- Technology Standard
- Current - Average Rectified (Io) 3A
- Supplier Device Package B, SQ-MELF
- Operating Temperature - Junction -65°C ~ 175°C
- Grade Military
- Voltage - DC Reverse (Vr) (Max) 200 V
- Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A
- Current - Reverse Leakage @ Vr 1 µA @ 200 V
- Qualification MIL-PRF-19500/411
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant
