技术参数

• Package / Case 10-SIP
• Mounting Type Through Hole
• Transistor Type 2 NPN, 2 PNP Darlington (H-Bridge)
• Operating Temperature 150°C (TJ)
• Power - Max 4W
• Current - Collector (Ic) (Max) 4A
• Voltage - Collector Emitter Breakdown (Max) 60V
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 4mA, 2A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 4V
• Supplier Device Package 10-SIP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant