技术参数

• Package / Case 3-UFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
• Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 4V
• Power Dissipation (Max) 425mW (Ta)
• Vgs(th) (Max) @ Id 1.2V @ 250µA
• Supplier Device Package X1-DFN1006-3
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 50 V
• Gate Charge (Qg) (Max) @ Vgs 0.58 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 50.54 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant