技术参数

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
• Current - Collector Cutoff (Max) 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
• Frequency - Transition 170MHz
• Supplier Device Package X2-DFN0806-3
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 45 V
• Power - Max 435 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant