技术参数

• Package / Case 8-PowerSMD, Flat Leads
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 16A (Ta), 59A (Tc)
• Rds On (Max) @ Id, Vgs 4.1mOhm @ 12A, 10V
• Power Dissipation (Max) 2W (Ta), 24.6W (Tc)
• Vgs(th) (Max) @ Id 3V @ 2.56mA
• Supplier Device Package HSSO8-F1-B
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 2940 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant