技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.3A (Ta), 22.5A (Tc)
• Rds On (Max) @ Id, Vgs 69mOhm @ 20A, 10V
• Power Dissipation (Max) 2.8W (Ta), 189W (Tc)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package PowerFlat™ (8x8) HV
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 100 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant