技术参数

• Package / Case 3-ESIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 8A, 4V
• Frequency - Transition 20MHz
• Supplier Device Package MT-200
• Current - Collector (Ic) (Max) 17 A
• Voltage - Collector Emitter Breakdown (Max) 200 V
• Power - Max 200 W
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant