技术参数

• Package / Case SOT-23-6
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
• Rds On (Max) @ Id, Vgs 42mOhm @ 5.5A, 4.5V
• Power Dissipation (Max) 1.7W (Ta)
• Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
• Supplier Device Package Micro6™(TSOP-6)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 12 V
• Gate Charge (Qg) (Max) @ Vgs 33 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 1820 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant