技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
• Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package Micro3™/SOT-23
• Drain to Source Voltage (Vdss) 12 V
• Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant