技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 780mA (Ta)
• Rds On (Max) @ Id, Vgs 600mOhm @ 610mA, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package Micro3™/SOT-23
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.45 V
• Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant