技术参数

• Package / Case 3-UFDFN
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 350mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA, 2V
• Frequency - Transition 100MHz
• Supplier Device Package X1-DFN1006-3
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 250 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant