技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1.2A (Ta)
• Rds On (Max) @ Id, Vgs 250mOhm @ 930mA, 4.5V
• Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
• Supplier Device Package Micro3™/SOT-23
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant