技术参数

• Package / Case SOT-23-6
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
• Rds On (Max) @ Id, Vgs 200mOhm @ 1.6A, 4.5V
• Vgs(th) (Max) @ Id 700mV @ 250µA (Min)
• Supplier Device Package Micro6™(SOT23-6)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant