技术参数

• Package / Case 6-PowerVDFN
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 7.2A (Ta), 15A (Tc)
• Rds On (Max) @ Id, Vgs 31mOhm @ 8.5A, 4.5V
• Vgs(th) (Max) @ Id 1.1V @ 10µA
• Supplier Device Package 6-PQFN (2x2)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 877 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected