技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Ta)
• Rds On (Max) @ Id, Vgs 8.25mOhm @ 14A, 4.5V
• Power Dissipation (Max) 1.5W (Ta)
• Vgs(th) (Max) @ Id 800mV @ 850µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 12 V
• Gate Charge (Qg) (Max) @ Vgs 120 nC @ 4.5 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant