- 产品型号 AOT4N60
- 品牌 Alpha and Omega Semiconductor, Inc.
- RoHS Yes
- 描述 MOSFET N-CH 600V 4A TO220
- 分类 单 FET、MOSFET
-
PDF
- 库存 1919
定价:
- 1 1.01
- 50 0.81
- 100 0.64
- 500 0.54
- 1000 0.44
- 2000 0.42
- 5000 0.4
- 10000 0.38
技术参数
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Rds On (Max) @ Id, Vgs 2.2Ohm @ 2A, 10V
- Power Dissipation (Max) 104W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
DIODE GEN PURP 1KV 1A DO41
库存: 269780
- 5000: 0.03
- 10000: 0.03
- 25000: 0.03
- 50000: 0.02
- 125000: 0.02
MOSFET N-CH 620V 2.7A TO220FP
库存: 3478
- 1: 1.02
- 50: 0.82
- 100: 0.65
- 500: 0.55
- 1000: 0.45
- 2000: 0.42
- 5000: 0.4
- 10000: 0.38
