- 产品型号 STB35N65M5
- 品牌 STMicroelectronics
- RoHS Yes
- 描述 MOSFET N-CH 650V 27A D2PAK
- 分类 单 FET、MOSFET
-
PDF
- 库存 1500
定价:
- 1000 3.98
- 2000 3.73
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 27A (Tc)
- Rds On (Max) @ Id, Vgs 98mOhm @ 13.5A, 10V
- Power Dissipation (Max) 160W (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Supplier Device Package D2PAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 100 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
