技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 29A (Ta), 100A (Tc)
• Rds On (Max) @ Id, Vgs 2.5mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id 2.35V @ 100µA
• Supplier Device Package PQFN (5x6) Single Die
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3635 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected