- 产品型号 TK042N65Z5,S1F(S
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 650V DTMOS6 HSD 42MOHM TO-247
- 分类 单 FET、MOSFET
- 库存 1710
定价:
- 1 11.3
- 30 9.02
- 120 8.07
- 510 7.12
- 1020 6.41
技术参数
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Ta)
- Rds On (Max) @ Id, Vgs 42mOhm @ 27.5A, 10V
- Power Dissipation (Max) 360W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 2.85mA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 6280 pF @ 300 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status Vendor Undefined
- RoHS Status RoHS Compliant
