技术参数

• Package / Case SC-100, SOT-669
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 200A (Tc)
• Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V
• FET Feature Schottky Diode (Body)
• Power Dissipation (Max) 194W (Tc)
• Vgs(th) (Max) @ Id 2.05V @ 1mA
• Supplier Device Package LFPAK56, Power-SO8
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 111 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 8138 pF @ 20 V
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant