技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -65°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 1V
• Frequency - Transition 300MHz
• Supplier Device Package SOT-23-3 (TO-236)
• Grade Automotive
• Current - Collector (Ic) (Max) 600 mA
• Voltage - Collector Emitter Breakdown (Max) 150 V
• Power - Max 250 mW
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095