技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 200mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 10V
• Frequency - Transition 50MHz
• Supplier Device Package SOT-23-3 (TO-236)
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 400 V
• Power - Max 350 mW
• ECCN EAR99
• HTSUS 8541.21.0095