- 产品型号 IMZA65R007M2HXKSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SILICON CARBIDE MOSFET
- 分类 单 FET、MOSFET
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PDF
- 库存 1500
定价:
- 1 41.97
- 10 39.16
- 30 37.51
- 120 34
- 270 32.82
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 210A (Tc)
- Rds On (Max) @ Id, Vgs 6.1mOhm @ 146.3A, 20V
- Power Dissipation (Max) 625W (Tc)
- Vgs(th) (Max) @ Id 5.6V @ 29.7mA
- Supplier Device Package PG-TO247-4-U02
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Vgs (Max) +23V, -7V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 179 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 6359 pF @ 400 V
- ECCN EAR99
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
