- 产品型号 BY25Q80BSMIG(R)
- 品牌 BYTe Semiconductor
- RoHS Yes
- 描述 8 MBIT, 3.0V (2.7V TO 3.6V), -40
- 分类 记忆
-
PDF
- 库存 31500
定价:
- 3000 0.18
- 6000 0.17
- 15000 0.16
- 30000 0.15
技术参数
- Package / Case 8-UFDFN Exposed Pad
- Mounting Type Surface Mount
- Memory Size 8Mbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 2.7V ~ 3.6V
- Technology FLASH - NOR (SLC)
- Clock Frequency 108 MHz
- Memory Format FLASH
- Supplier Device Package 8-USON (2x3)
- Write Cycle Time - Word, Page 50µs, 2.4ms
- Memory Interface SPI - Quad I/O, QPI
- Access Time 7 ns
- Memory Organization 1M x 8
- HTSUS 8542.32.0071
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
