技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 200°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Tc)
• Rds On (Max) @ Id, Vgs 54mOhm @ 16A, 18V
• Power Dissipation (Max) 312W (Tc)
• Vgs(th) (Max) @ Id 4.2V @ 5mA
• Supplier Device Package TO-247-4
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 56 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1329 pF @ 800 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant