技术参数

• Package / Case 200-TFBGA
• Mounting Type Surface Mount
• Memory Size 4Gbit
• Memory Type Volatile
• Operating Temperature -40°C ~ 105°C (TC)
• Voltage - Supply 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Technology SDRAM - Mobile LPDDR4
• Clock Frequency 1.6 GHz
• Memory Format DRAM
• Supplier Device Package 200-TFBGA (10x14.5)
• Write Cycle Time - Word, Page 18ns
• Memory Interface LVSTL_11
• Access Time 3.6 ns
• Memory Organization 128M x 32
• ECCN EAR99
• HTSUS 8542.32.0036
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant