技术参数

• Package / Case SC-100, SOT-669
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 300A (Ta)
• Rds On (Max) @ Id, Vgs 1.02mOhm @ 25A, 10V
• FET Feature Schottky Diode (Body)
• Power Dissipation (Max) 238W (Ta)
• Vgs(th) (Max) @ Id 2.2V @ 2mA
• Supplier Device Package LFPAK56, Power-SO8
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 121.35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 8598 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant