技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 11Ohm @ 100mA, 10V
• Power Dissipation (Max) 1.6W (Tj)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package SOT-23-3L
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 34 pF @ 300 V
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant