- 产品型号 BY25Q32ESSIG(R)
- 品牌 BYTe Semiconductor
- RoHS Yes
- 描述 32 MBIT, 3.0V (2.7V TO 3.6V), -4
- 分类 记忆
-
PDF
- 库存 5318
定价:
- 2000 0.26
- 4000 0.24
- 6000 0.24
- 10000 0.23
- 14000 0.23
技术参数
- Package / Case 8-SOIC (0.209", 5.30mm Width)
- Mounting Type Surface Mount
- Memory Size 32Mbit
- Memory Type Non-Volatile
- Operating Temperature -40°C ~ 85°C (TA)
- Voltage - Supply 2.7V ~ 3.6V
- Technology FLASH - NOR (SLC)
- Clock Frequency 120 MHz
- Memory Format FLASH
- Supplier Device Package 8-SOP
- Write Cycle Time - Word, Page 50µs, 2.4ms
- Memory Interface SPI - Quad I/O
- Access Time 11.5 ns
- Memory Organization 4M x 8
- ECCN EAR99
- HTSUS 8542.32.0071
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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