技术参数

• Package / Case 22-PowerBSOP Module
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 98A (Tc)
• Rds On (Max) @ Id, Vgs 22mOhm @ 41.5A, 18V
• Power Dissipation (Max) 384W (Tc)
• Vgs(th) (Max) @ Id 5.6V @ 14.9mA
• Supplier Device Package PG-HDSOP-22
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 0V, 18V
• Vgs (Max) +23V, -5V
• Drain to Source Voltage (Vdss) 750 V
• Gate Charge (Qg) (Max) @ Vgs 80 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 2869 pF @ 500 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant