技术参数

• Package / Case TO-261-3
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100mA
• Rds On (Max) @ Id, Vgs 45Ohm @ 100mA, 0V
• FET Feature Depletion Mode
• Power Dissipation (Max) 2.25W (Ta)
• Vgs(th) (Max) @ Id 3.1V @ 1µA
• Supplier Device Package SOT-223-2L
• Drive Voltage (Max Rds On, Min Rds On) 0V
• Vgs (Max) ±15V
• Drain to Source Voltage (Vdss) 800 V
• Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)