- 产品型号 DMWSH120H90SM4Q
- 品牌 Zetex Semiconductors (Diodes Inc.)
- RoHS Yes
- 描述 SIC MOSFET BVDSS: >1000V TO247-4
- 分类 单 FET、MOSFET
-
PDF
- 库存 1527
定价:
- 1 19.68
- 30 15.93
- 120 15
- 510 13.59
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Rds On (Max) @ Id, Vgs 97.5mOhm @ 20A, 15V
- Power Dissipation (Max) 235W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 5mA
- Supplier Device Package TO-247-4
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) +19V, -8V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 47.6 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 1000 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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