技术参数

• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 30A
• Vgs(th) (Max) @ Id 1.4V @ 3.5mA
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7.5V, -12V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 241 pF @ 400 V
• ECCN 3A001
• HTSUS 8541.49.7000
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status RoHS Compliant