技术参数

• Package / Case SOT-23-6 Thin, TSOT-23-6
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4A (Ta)
• Rds On (Max) @ Id, Vgs 53mOhm @ 4A, 10V
• Power Dissipation (Max) 600mW (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package TSMT6 (SC-95)
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Vgs (Max) 21V
• Drain to Source Voltage (Vdss) 45 V
• Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant