技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 44A (Tc)
• Rds On (Max) @ Id, Vgs 65mOhm @ 500mA, 10V
• Power Dissipation (Max) 298W (Tc)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package TO-220-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±15V
• Drain to Source Voltage (Vdss) 150 V
• Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 13400 pF @ 25 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant