- 产品型号 18N20F
- 品牌 Goford Semiconductor
- RoHS No
- 描述 MOSFET N-CH 200V 18A TO-220F
- 分类 单 FET、MOSFET
-
PDF
- 库存 51500
定价:
- 1 0.44
技术参数
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
- Power Dissipation (Max) 110W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-220F
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- ECCN EAR99
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status Vendor Undefined
- RoHS Status RoHS non-compliant
