技术参数

• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 200A (Ta)
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6120 pF @ 15 V
• ECCN EAR99
• HTSUS 8532.25.0020
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant