技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 24A (Ta)
• Rds On (Max) @ Id, Vgs 196mOhm @ 10A, 20V
• Power Dissipation (Max) 155W (Ta)
• Vgs(th) (Max) @ Id 4.5V @ 3mA
• Supplier Device Package TO-247-3
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +25V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 35 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 736 pF @ 1000 V
• ECCN EAR99
• HTSUS 8541.29.0095