- 产品型号 SIA112LDJ-T1-GE3
- 品牌 Vishay / Siliconix
- RoHS No
- 描述 N-CHANNEL 100-V (D-S) MOSFET POW
- 分类 单 FET、MOSFET
-
PDF
- 库存 7498
定价:
- 3000 0.26
- 6000 0.25
- 9000 0.23
- 30000 0.23
技术参数
- Package / Case PowerPAK® SC-70-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 8.8A (Tc)
- Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
- Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package PowerPAK® SC-70-6
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±25V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 355 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
