技术参数

• Package / Case TO-247-2
• Mounting Type Through Hole
• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 490pF @ 1V, 1MHz
• Current - Average Rectified (Io) 10A
• Supplier Device Package TO-247-2
• Operating Temperature - Junction 175°C
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Voltage - Forward (Vf) (Max) @ If 1.65 V @ 10 A
• Current - Reverse Leakage @ Vr 110 µA @ 1200 V
• ECCN EAR99
• HTSUS 8541.10.0080