技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 85mOhm @ 10A, 15V
• Vgs(th) (Max) @ Id 2.4V @ 5mA
• Supplier Device Package TO-247-3
• Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 810 pF @ 200 V
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant