- 产品型号 G1K3N10G
- 品牌 Goford Semiconductor
- RoHS Yes
- 描述 N100V, 5A,RD<130M@10V,VTH1V~2V,
- 分类 单 FET、MOSFET
-
PDF
- 库存 2253
定价:
- 1000 0.74
- 2000 0.7
- 5000 0.67
- 10000 0.65
技术参数
- Package / Case TO-243AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
- Power Dissipation (Max) 1.5W (Tc)
- Vgs(th) (Max) @ Id 2V @ 250µA
- Supplier Device Package SOT-89
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
