技术参数

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 30A (Tc)
• Rds On (Max) @ Id, Vgs 55mOhm @ 20A, 18V
• Power Dissipation (Max) 221W (Tc)
• Vgs(th) (Max) @ Id 4.2V @ 1mA
• Supplier Device Package HU3PAK
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 39.5 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 400 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)