技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 123A (Tc)
• Rds On (Max) @ Id, Vgs 16.5mOhm @ 60A, 18V
• Power Dissipation (Max) 552W (Tc)
• Vgs(th) (Max) @ Id 5.5V @ 48mA
• Supplier Device Package PG-TO247-4-U04
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +20V, -7V
• Drain to Source Voltage (Vdss) 2000 V
• Gate Charge (Qg) (Max) @ Vgs 246 nC @ 18 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant