技术参数

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 235mV @ 100mA, 1A
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 230 @ 100mA, 2V
• Frequency - Transition 180MHz
• Supplier Device Package DFN1010D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 325 mW
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0075
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant