技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V
• Frequency - Transition 220MHz
• Supplier Device Package TO-236AB
• Current - Collector (Ic) (Max) 900 mA
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 270 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant