- 产品型号 GT10N10
- 品牌 Goford Semiconductor
- RoHS Yes
- 描述 N100V, 7A,RD<140M@10V,VTH1.5V~2.
- 分类 单 FET、MOSFET
-
PDF
- 库存 5892
定价:
- 2500 0.16
- 5000 0.15
- 12500 0.14
- 25000 0.14
- 62500 0.13
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7A (Tc)
- Rds On (Max) @ Id, Vgs 140mOhm @ 3.5A, 10V
- Power Dissipation (Max) 17W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package TO-252
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 206 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
