技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 200mV @ 10mA, 50mA
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 10V
• Frequency - Transition 50MHz
• Supplier Device Package TO-236AB
• Grade Automotive
• Current - Collector (Ic) (Max) 150 mA
• Voltage - Collector Emitter Breakdown (Max) 500 V
• Power - Max 300 mW
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected